张希仁

个人简历

2004年6月毕业于西安交通大学电子与信息工程学院，获硕士学位；2008年毕业于中国科学院光电技术研究所（成都），获博士学位。2007年获中国科学院院长奖学金。2008年3月进入电子科技大学光电信息学院任教。先后参与国家自然科学基金、四川省青年基金和中科院光电所领域前沿部署课题等项目。目前主持国家自然科学基金1项。先后在Appl. Phys. Lett., J. Appl. Phys., Eur. Phys. J. Special Topic、《物理学报》和Chin. Phys. B 等国内外学术期刊上发表论文10余篇，其中第一作者论文被SCI收录6篇。

研究领域

光声光热成像技术、材料无损检测以及光信息处理等领域的研究。

近期论文

Zhang Xi-Ren, Gao Chun-Ming,Zhou Ying, and Wang Zhan-Ping,Measurement accuracy analysis of the free carrier absorption determination of the electronic transport, Chin. Phys. B Vol. 20, No. 6 (2011)068105(SCI源刊). Xiren Zhang, Bincheng Li, Yudong Zhang, Measuring the electronic transport properties of Si wafers with laser-induced free-carrier dynamics, 2006 OSA Annual Meeting Frontiers in Optics - Laser Science XXII (FiO-LS), 2006.10: JWD118 (光盘收录). Xiren Zhang, Bincheng Li, and Chunming Gao,Electronic transport characterization of silicon wafers by laterally resolved free carrier absorption and multiparameter fitting,Appl. Phys. Lett., 2006 89(11): 112120-1-112120-3 (SCI源刊). Xiren Zhang, Bincheng Li, and Chunming Gao, Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers, Eur. Phys. J. Special Topics, 2008, 153, 279-281 (SCI源刊). Xiren Zhang, Bincheng Li, and Xianming Liu, Sensitivity analysis of laterally-resolved modulated free carrier absorption determination of electronic transport properties of Si wafer, J. Appl. Phys., 2008, 103, 033709-1-033709-7 (SCI源刊). 张希仁，李斌成，刘显明，调制自由载流子吸收测量半导体载流子输运参数的三维理论，物理学报，2008, 57, 7310-7316 (SCI源刊). Xiren Zhang, Bincheng Li, and Xianming Liu, Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption，J. Appl. Phys. 2008, 104, 103705-1-103705-7(SCI源刊). Chunming Gao, Bincheng Li, and Xiren Zhang, Time-domain modulated free-carrier absorption measurements of the recombination process in silicon, Eur. Phys. J. Special Topics, 2008, 153, 275-277 (SCI源刊). Xianming Liu, Bincheng Li, and Xiren Zhang,Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers，J. Appl. Phys., 2008, 103, 123706 (SCI源刊).

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